Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes

The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum ...

THz resonant-tunneling diodes

Comparison of Bistable Circuits Based on Resonant-Tunneling Diodes

Using computer-aided circuit simulation, the speed of RTD-based bistable circuits has been evaluated in terms of device parameters, such as the transistor’s fT and fmax, and circuit parameters, such as sizing. Two topologies studied in this work are: 1) monostable-to-bistable transition logic element (MOBILE), and 2) quantum bistable logic circuit (QBL). The transistors studied in this paper ar...

Electronic properties of core-shell nanowire resonant tunneling diodes

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells ...

Resonant Tunneling Diodes: Models And Properties - Proceedings of the IEEE

The resonant tunneling diode (RTD) has been widely studied because of its importance in the field of nanoelectronic science and technology and its potential applications in very high speed/functionality devices and circuits. Even though much progress has been made in this regard, additional work is needed to realize the full potential of RTD’s. As research on RTD’s continues, we will try in thi...